Direct bonding Nd:YAG to sapphire wafers

机译：将Nd：YaG直接键合到蓝宝石晶片上

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We demonstrate chemical-assisted direct bonding of 450μm-thick neodymium-doped YAG to 660μm-thick sapphire wafers. Diced, polished and AR-coated the composite was trialed in a pump-guided free-space laser. Preliminary performance and future prospects will be discussed.

机译：我们演示了化学辅助直接键合的450微米厚的掺钕YAG与660微米厚的蓝宝石晶片。切块，抛光和增透膜涂层的复合材料在泵浦引导的自由空间激光器中进行了试验。将讨论其初步性能和未来前景。

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作者
Stenhouse, Henry G.; Beecher, Stephen J.; Mackenzie, Jacob I.;
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年度 2017
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正文语种 en
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1. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical liftoff and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire [J] . S. Gautier, T. Moudakir, G. Patriarche, Journal of Crystal Growth . 2013,第maya1期

机译：使用化学剥离和室温直接晶片键合以及GaN晶片规模在ZnO缓冲蓝宝石上进行GaN晶片规模的MOVPE生长，从蓝宝石转移到玻璃基板的MOVPE GaN薄膜的结构和成分表征
2. A flip-chip AlGaInP LED with GaN/sapphire transparent substrate fabricated by direct wafer bonding [J] . Liang T, Guo X, Guan BL, Chinese physics letters . 2007,第4期

机译：通过直接晶圆键合制造的具有GaN /蓝宝石透明基板的倒装芯片AlGaInP LED
3. A flip-chip AlGaInP LED with GaN/sapphire transparent substrate fabricated by direct wafer bonding [J] . Liang T, Guo X, Guan BL, Chinese physics letters . 2007,第4期

机译：通过直接晶圆键合制造的具有GaN /蓝宝石透明基板的倒装芯片AlGaInP LED
4. Low temperature direct wafer to wafer bonding for 3D integration: Direct bonding, surface preparation, wafer-to-wafer alignment [C] . Gaudin Gweltaz, Riou Gregory, Landru Didier, 2010 IEEE International 3D Systems Integration Conference . 2010

机译：低温直接晶圆对晶圆键合，实现3D集成：直接键合，表面准备，晶圆间对准
5. Indium gallium arsenide and gallium nitride FETs via Direct Wafer Bonding. [D] . Snow, Eric Loren. 2010

机译：通过直接晶圆键合的砷化铟镓和氮化镓FET。
6. Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding [O] . Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, 2020

机译：金膜厚度和表面粗糙度对室温晶圆键合和金-金表面活化键合的晶圆级真空密封的影响
7. Hydrodynamical conditions in the melt at the growth of sapphire and YAG crystals by horizontal directed crystallization [O] . Nizhankovskyi, S.V., Tan'ko, A.V. 2015

机译：通过水平定向结晶在蓝宝石和YAG晶体生长时熔体中的流体力学条件

Direct bonding Nd:YAG to sapphire wafers

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